Philips Semiconductors Product specification
Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series
ultrafast, rugged
Fig.1. Definition of trr1, Qs
and I
rrm
Fig.2. Definition of Vfr
Fig.3. Maximum forward dissipation PF
= f(I
F(AV)) per
diode; square current waveform where
IF(AV)
=I
F(RMS)
x
√D.
Fig.4. Circuit schematic for trr2
Fig.5. Definition of trr2
Fig.6. Maximum forward dissipation PF
= f(I
F(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS)
/ I
F(AV).
Q
s
100%
10%
time
dI
F
dt
IR
I
F
Irrm
trr
shunt
Current
to 'scope
D.U.T.
Voltage Pulse Source
R
time
time
V
F
V
fr
V
F
I
F
I = 1AR
I = 0.25Arec
0A
trr2
0.5A
IF
IR
0
150
024681012
2
4
6
8
Rs = 0.025 Ohms10
12
Forward dissipation, PF (W)
Vo = 0.75 V
0.5
0.2
0.1
BYQ30
Average forward current, IF(AV) (A)
Tmb(max) / C
D = 1.0
114
144
138
132
126
120
D = tpT
tp
T
t
I
0
150012345678
2
4
6
8
10
Rs 0.025 Ohms
12
Forward dissipation, PF (W)
a = 1.57
1.9
2.2
2.8
4
BYQ30
Vo = 0.75 V
Average forward current, IF(AV) (A)
Tmb(max) / C114
144
138
132
126
120
October 1998 3 Rev 1.200